The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2010
Filed:
Jan. 14, 2005
Noboru Ichinose, Tokyo, JP;
Kiyoshi Shimamura, Tokyo, JP;
Kazuo Aoki, Tokyo, JP;
Encarnacion Antonia Garcia Villora, Tokyo, JP;
Noboru Ichinose, Tokyo, JP;
Kiyoshi Shimamura, Tokyo, JP;
Kazuo Aoki, Tokyo, JP;
Encarnacion Antonia Garcia Villora, Tokyo, JP;
Waseda University, Tokyo, JP;
Abstract
To provide a GaOcompound semiconductor device in which a GaOsystem compound is used as a semiconductor, which has an electrode having ohmic characteristics adapted to the GaOsystem compound, and which can make a heat treatment for obtaining the ohmic characteristics unnecessary. An n-side electrodeincluding at least a Ti layer is formed on a lower surface of an n-type β-GaOsubstrateby utilizing a PLD method. This n-side electrodehas ohmic characteristics at 25° C. The n-side electrodemay have two layer including a Ti layer and an Au layer, three layers including a Ti layer, an Al layer and an Au layer, or four layers including a Ti layer, an Al layer, a Ni layer and an Au layer.