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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7799669 B1

PDFFull Text
Date of Patent:
Sep. 21, 2010

Filed:

Apr. 27, 2007

Method of forming a high-k gate dielectric layer

Applicants:

Manfred Ramin, Austin, TX (US);

Michael F. Pas, Richardson, TX (US);

Husam Alshareef, Austin, TX (US);

Inventors:

Manfred Ramin, Austin, TX (US);

Michael F. Pas, Richardson, TX (US);

Husam Alshareef, Austin, TX (US);

Assignee:

Texas Instruments Incorporated, Dallas, TX (US);

Attorneys:

Warren L. Franz

Wade J. Brady, III

Frederick J. Telecky, Jr.

Primary Examiner:

Hung Vu

Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for manufacturing a semiconductor device. The method comprises forming a dielectric layer. Forming the dielectric layer includes depositing a silicon oxide layer on a semiconductor substrate, nitridating the silicon oxide layer to form a nitrided silicon oxide layer and incorporating lanthanide atoms into the nitrided silicon oxide layer to form a lanthanide silicon oxynitride layer.

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Ramin, Manfred. (2010). Method of forming a high-k gate dielectric layer (U.S. Patent No. 7799669). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7799669

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