The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2010
Filed:
Sep. 11, 2008
Jung-dal Choi, Seoul, KR;
Young-woo Park, Seoul, KR;
Jin-taek Park, Suwon-si, KR;
Chung-il Hyun, Seoul, KR;
Jung-Dal Choi, Seoul, KR;
Young-Woo Park, Seoul, KR;
Jin-Taek Park, Suwon-si, KR;
Chung-Il Hyun, Seoul, KR;
Samsung Electronics Co., Ltd, Gyeonggi-do, KR;
Abstract
An embodiment of a semiconductor device includes a substrate including a cell region and a peripheral region; a cell gate pattern on the cell region; and a peripheral gate pattern on the peripheral region, wherein a first cell insulation layer, a second cell insulation layer, and a third cell insulation layer may be between the substrate and the cell gate pattern, a first peripheral insulation layer, a second peripheral insulation layer, and a third peripheral insulation layer may be between the substrate and the peripheral gate pattern, and the second cell insulation layer and the third cell insulation layer include the same material as the respective second peripheral insulation layer and third peripheral insulation layer.