The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7799631 B1

PDF
Full Text
Expired
Date of Patent:
Sep. 21, 2010

Filed:

May. 24, 2007
Applicant:

Jong-bum Park, Ichon-shi, KR;

Inventor:

Jong-Bum Park, Ichon-shi, KR;

Assignee:

Hynix Semiconductor Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8242 (2006.01); H01L 27/108 (2006.01); H01L 29/94 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

A dielectric layer of a capacitor includes a first dielectric layer, a second dielectric layer formed over the first dielectric layer, the second dielectric layer having a dielectric constant lower than that of the first dielectric layer, and a third dielectric layer formed over the second dielectric layer, the third dielectric layer having a dielectric constant higher that of than the second dielectric layer, wherein the third dielectric layer has a greater thickness than each of the first and second dielectric layers.


Find Patent Forward Citations

Park, Jong-Bum. (2010). Multiple-layer dielectric layer and method for fabricating capacitor including the same (U.S. Patent No. 7799631). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7799631

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…