The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 21, 2010

Filed:

Oct. 18, 2007
Applicant:

Vladimir Alexeevich Ukraintsev, Allen, TX (US);

Inventor:
Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01B 5/28 (2006.01);
U.S. Cl.
CPC ...
Abstract

Measuring surface profiles of structures on integrated circuits is difficult when feature sizes are less than 100 nanometers. Atomic force microscopy provides surface profile measurement capability on flat horizontal surfaces, but has difficulty with three-dimensional structures such as MOS transistor gates, contact and via holes, interconnect trenches and photoresist patterns. An atomic force microscopy probe with two atomically sharp tips configured to facilitate measurements of three-dimensional structures is disclosed. A method of making such measurements using the disclosed probe and a method of fabricating an IC encompassing the method are also claimed.


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