The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2010
Filed:
Jan. 02, 2009
Yasuyuki Nakagawa, Tokyo, JP;
Harumi Nishiguchi, Tokyo, JP;
Kyosuke Kuramoto, Tokyo, JP;
Masatsugu Kusunoki, Tokyo, JP;
Takeo Shirahama, Tokyo, JP;
Yosuke Suzuki, Tokyo, JP;
Hiromasu Matsuoka, Hyogo, JP;
Yasuyuki Nakagawa, Tokyo, JP;
Harumi Nishiguchi, Tokyo, JP;
Kyosuke Kuramoto, Tokyo, JP;
Masatsugu Kusunoki, Tokyo, JP;
Takeo Shirahama, Tokyo, JP;
Yosuke Suzuki, Tokyo, JP;
Hiromasu Matsuoka, Hyogo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A GaN laser, includes a coating film on a front end surface through which laser light is emitted. The coating film includes a first insulating film in contact with the front end surface and a second insulating film on the first insulating film. The optical film thickness of the second insulating film is an odd multiple of λ/4 with respect to the wavelength λ of laser light produced by the semiconductor laser. The adhesion of the first insulating film to GaN is stronger than the adhesion of the second insulating film to GaN. The refractive index of the second insulating film is 2 to 2.3 thick. The first insulating film is 10 nm or less. The first insulating film is an oxide film having a stoichiometric composition.