The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 14, 2010

Filed:

Dec. 29, 2007
Applicants:

Lieh-chiu Lin, Kaohsiung, TW;

Shyh-shyuan Sheu, Taichung, TW;

Pei-chia Chiang, Taipei, TW;

Inventors:

Lieh-Chiu Lin, Kaohsiung, TW;

Shyh-Shyuan Sheu, Taichung, TW;

Pei-Chia Chiang, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

A sensing circuit of a phase change memory. The sensing circuit comprises a storage capacitor and a reference capacitor, a storage memory device and a reference memory device, a storage discharge switch and a reference discharge switch, and an arbitrator. First terminals of the storage capacitor and the reference capacitor are respectively coupled to a pre-charge voltage via first switches. First terminals of the storage memory device and the reference memory device are respectively coupled to the first terminals of the storage capacitor and the reference capacitor. The storage discharge switch and the reference discharge switch are respectively coupled to second terminals of the storage memory device and the reference memory device. The arbitrator is coupled to the first terminals of the storage memory device and the reference memory device and provides an output as a read result of the storage memory device.


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