The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 14, 2010

Filed:

Apr. 30, 2004
Applicants:

Atsuo Ishizuka, Kanagawa, JP;

Hisashi Yamaguchi, Kanagawa, JP;

Yasunobu Hashimoto, Kanagawa, JP;

Inventors:

Atsuo Ishizuka, Kanagawa, JP;

Hisashi Yamaguchi, Kanagawa, JP;

Yasunobu Hashimoto, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G09G 3/32 (2006.01);
U.S. Cl.
CPC ...
Abstract

The display device of the invention comprises a plurality of scanning lines (Wscan and Escan) which are selected successively, a plurality of data lines (Data) to which the writing electric current (Idata) in accordance with brightness information is supplied according to the scanning line selection, and a plurality of pixels (PX) arranged at intersecting points between the scanning lines and the data lines. Each of the pixels comprises a light emitting element (OLED), a driving transistor (TFT), a capacitor (C) connected to the gate (Nd) of the driving transistor for accumulating writing data, a first transistor (TFT) which is turned on during writing period in which the scanning lines are scanned and which connects the data lines and the drain of the driving transistor, and a second transistor (TFT) which is turned on during the writing period and which short-circuits the gate and drain of the driving transistor. With such a structure, the light emitting element can be driven with a driving electric current equivalent to the writing electric current, irrespective of variations in characteristics of the transistors.


Find Patent Forward Citations

Loading…