The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2010
Filed:
May. 28, 2008
Hideyuki Aota, Himeji, JP;
Hideyuki Aota, Himeji, JP;
Ricoh Company, Ltd., Tokyo, JP;
Abstract
A reference voltage generator includes a first field effect transistor with n-type heavily doped gate structure and a second field effect transistor with p-type heavily doped gate structure. The first transistor is configured to have a gate and a substrate gate connected to ground, one terminal connected to a voltage supply, and another terminal connected to an output node. The second transistor is configured to have a gate and one terminal connected to the output node, and a substrate gate and another terminal connected to ground. The output node outputs a given reference voltage when voltage is supplied from the voltage supply. A voltage regulator that generates a constant voltage based on a given reference voltage incorporates the reference voltage generator.