The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2010
Filed:
May. 09, 2007
Alexei Koudymov, Troy, NY (US);
Michael Shur, Latham, NY (US);
Alexei Koudymov, Troy, NY (US);
Michael Shur, Latham, NY (US);
Sensor Electronic Technology, Inc., Columbia, SC (US);
Abstract
A field effect transistor that can be operated as a low voltage Class Fradio frequency (RF) amplifier with harmonic tuning is provided. The field effect transistor includes a common electrode, a gate, and multiple separate electrodes. The common electrode can comprise a source or drain, while the separate electrodes can comprise drains or sources, respectively. The gate can be profiled in a manner that forms multiple gate sections, each having a unique gate length within the gate sections. Each separate electrode can correspond to one of the plurality of gate sections. When operated as a Class FRF amplifier with a linear harmonic input, the output signal will comprise a non-linear square wave with sharp fronts and relatively flat peak states.