The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2010
Filed:
May. 30, 2007
Georg Georgakos, Erding, DE;
Bernhard Dobler, Erding, DE;
Georg Georgakos, Erding, DE;
Bernhard Dobler, Erding, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
In accordance with an embodiment, a FinFET device includes: one or more fins, a dummy fin, a gate line, a gate contact landing pad, and a gate contact element. Each of the fins extends in a first direction above a substrate. The dummy fin extends in parallel with the fins in the first direction above the substrate. The gate line extends in a second direction above the substrate, and partially wraps around the fins. The gate contact landing pad is positioned adjacent to or above the dummy fin and electrically coupled to the gate line. The gate contact element is electrically coupled to the gate contact landing pad and is positioned to the top surface thereof.