The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2010
Filed:
Feb. 21, 2007
Tomoaki Shino, Kawasaki, JP;
Tomoaki Shino, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor memory device includes a supporting substrate including semiconductor materials. The memory device also includes an insulation film provided above the supporting substrate. The memory device further includes a first diffusion layer provided on the insulation film. In addition, the memory device includes a second diffusion layer provided on the insulation film. The memory device additionally includes a body region provided between the first diffusion layer and the second diffusion layer. The body region is in an electrically floating state and accumulates or releases electric charges for storing data. Also, the memory device includes a semiconductor layer penetrating the insulation film and electrically connecting the second diffusion layer to the supporting substrate to release electric charges from the second diffusion layer. Further, the memory device includes a gate insulation film provided on the body region. Additionally, the memory device includes a gate electrode provided on the gate insulation film.