The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2010
Filed:
May. 27, 2005
Akito Hara, Kawasaki, JP;
Akito Hara, Kawasaki, JP;
Fujitsu Semiconductor Limited, Yokohama, JP;
Abstract
A method for manufacturing a semiconductor device, including the steps of: forming a shielding filmon a first insulating film; sequentially forming a second insulating filmand an amorphous semiconductor filmon the shielding film; melting the amorphous semiconductor filmat least in portions to be channels of thin-film transistors by irradiating an energy beam onto the amorphous semiconductor film, and converting the amorphous semiconductor filminto a polycrystalline semiconductor film; sequentially forming a gate insulating filmand a gate electrodeon the polycrystalline semiconductor filmon the channels; and forming source and drain regionsin the polycrystalline semiconductor filmon sides of the gate electrode, and forming a TFTby use of the source and drain regions, the gate insulating film, and the gate electrode