The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2010
Filed:
Aug. 07, 2006
Diana L. Huffaker, Albuquerque, NM (US);
Noppadon Nuntawong, Albuquerque, NM (US);
Diana L. Huffaker, Albuquerque, NM (US);
Noppadon Nuntawong, Albuquerque, NM (US);
STC.UNM, Albuquerque, NM (US);
Abstract
Embodiments provide a quantum dot active structure and a methodology for its fabrication. The quantum dot active structure includes a substrate, a plurality of alternating regions of a quantum dot active region and a strain-compensation region, and a cap layer. The strain-compensation region is formed to eliminate the compressive strain of an adjacent quantum dot active region, thus allowing quantum dot active regions to be densely-stacked. The densely-stacked quantum dot active region provides increased optical modal gain for semiconductor light emitting devices such as edge emitting lasers, vertical cavity lasers, detectors, micro-cavity emitters, optical amplifiers or modulators.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile