The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2010
Filed:
Jul. 23, 2008
Toru Hirohata, Hamamatsu, JP;
Minoru Niigaki, Hamamatsu, JP;
Toru Hirohata, Hamamatsu, JP;
Minoru Niigaki, Hamamatsu, JP;
Hamamatsu Photonics K.K., Hamamatsu-shi, Shizuoka, JP;
Abstract
When to-be-detected light is made incident from a support substrateside of a photocathode E, a light absorbing layerabsorbs this to-be-detected light and produces photoelectrons. However, depending on the thickness and the like of the light absorbing layerthe to-be-detected light can be transmitted through the light absorbing layerwithout being sufficiently absorbed by the light absorbing layerThe to-be-detected light transmitted through the light absorbing layerreaches an electron emitting layerA part of the to-be-detected light that has reached the electron emitting layerproceeds toward a through-holeof a contact layerSince the length dof a diagonal line of the through-holeis shorter than the wavelength of the to-be-detected light, the to-be-detected light can be suppressed from passing through the through-holeand being emitted to the exterior. The to-be-detected light suppressed from being externally emitted is reflected on the exposed surface of the electron emitting layerand is again made incident into the light absorbing layerto be absorbed. Thereby, a photocathode excellent in light detection sensitivity is realized.