The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2010
Filed:
Sep. 05, 2002
Sundaresan Athinarayanan, Tsukuba, JP;
Hideo Ihara, Tsukuba, JP;
Yoshiko Ihara, Legal Representative, Tsukuba, JP;
Hideyo Ihara, Legal Representative, Otsuka, JP;
Hidetaka Ihara, Legal Representative, Otsuka, JP;
Gen-ei Ihara, Legal Representative, Takamatsu, JP;
Chiaki Ihara, Legal Representative, Oyaguchi Kita-machi, JP;
Sundaresan Athinarayanan, Tsukuba, JP;
Hideo Ihara, Tsukuba, JP;
Yoshiko Ihara, legal representative, Tsukuba, JP;
Hideyo Ihara, legal representative, Otsuka, JP;
Hidetaka Ihara, legal representative, Otsuka, JP;
Gen-ei Ihara, legal representative, Takamatsu, JP;
Chiaki Ihara, legal representative, Oyaguchi Kita-machi, JP;
Japan Science and Technology Agency, Kawaguchi-shi, JP;
Abstract
An oxide high temperature superconductor and method of making which includes a first buffer layer composed of CeOformed on a sapphire R (1, −1, 0, 2) face substrate for reducing lattice mismatch between the sapphire R (1, −1, 0, 2) face substrate and the oxide high temperature superconductor thin film, and a second buffer layer composed of such an oxide high temperature superconductor but in which Ba is substituted with Sr formed on the first buffer layer. The first buffer layer reduces the lattice mismatch between the sapphire R (1, −1, 0, 2) face substrate and the oxide high temperature superconductor thin, the second buffer layer prevents an interfacial reaction with Ba, thereby permitting the epitaxial growth of an oxide high temperature superconductor thin film that excels in both crystallographic integrity and crystallographic orientation.