The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2010
Filed:
Dec. 30, 2008
Applicants:
Eun Shil Park, Namyangju-Si, KR;
Kwon Hong, Seongnam-si, KR;
Jae Hong Kim, Seongnam-si, KR;
Jae Hyoung Koo, Seoul, KR;
Inventors:
Eun Shil Park, Namyangju-Si, KR;
Kwon Hong, Seongnam-si, KR;
Jae Hong Kim, Seongnam-si, KR;
Jae Hyoung Koo, Seoul, KR;
Assignee:
Hynix Semiconductor Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention discloses to a method of forming a gate electrode, the method according to the present invention comprises the steps of forming a lower amorphous silicon layer using silane (SiH) gas and nitrous oxide (NO) gas; forming an upper amorphous silicon layer on the lower amorphous silicon layer; and crystallizing the lower and upper amorphous silicon layers through a thermal process.