The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2010
Filed:
Feb. 21, 2008
Ki-seog Youn, Suwon-si, KR;
Jong-hyon Ahn, Suwon-si, KR;
Deok-hyung Lee, Seoul, KR;
Sung-gun Kang, Suwon-si, KR;
Kong-soo Cheong, Seoul, KR;
Ki-seog Youn, Suwon-si, KR;
Jong-hyon Ahn, Suwon-si, KR;
Deok-hyung Lee, Seoul, KR;
Sung-gun Kang, Suwon-si, KR;
Kong-soo Cheong, Seoul, KR;
Abstract
A trench isolation type semiconductor device in which a recess is prevented from being formed in a field region and a method of fabricating the same are provided. The trench isolation type semiconductor device includes a semiconductor substrate defined by an active region and a field region, a trench formed in the field region, an oxide layer conformally formed along the inside of the trench, a liner layer conformally formed along the oxide layer, a field insulating layer formed inside the trench including the oxide layer and the liner layer, and a field protection layer formed on the field insulating layer so that a step difference does not occur on the semiconductor substrate.