The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2010
Filed:
Sep. 02, 2009
Applicants:
Roland Hampp, Poughkeepsie, NY (US);
Alois Gutmann, Poughkeepsie, NY (US);
Jin-ping Han, Fishkill, NY (US);
O Sung Kwon, Wappingers Falls, NY (US);
Inventors:
Roland Hampp, Poughkeepsie, NY (US);
Alois Gutmann, Poughkeepsie, NY (US);
Jin-Ping Han, Fishkill, NY (US);
O Sung Kwon, Wappingers Falls, NY (US);
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
Abstract
A trench is formed in the surface of a provided semiconductor body. An oxide is deposited in the trench and a cap is deposited on the oxide, wherein the combination of the cap and the oxide impart a mechanical stress on the semiconductor body.