The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2010
Filed:
Nov. 08, 2007
Hyun-jae Kang, Gunpo-si, KR;
Ji-young Lee, Yongin-si, KR;
Han-ku Cho, Seongnam-si, KR;
Gi-sung Yeo, Seoul, KR;
Hyun-jae Kang, Gunpo-si, KR;
Ji-young Lee, Yongin-si, KR;
Han-ku Cho, Seongnam-si, KR;
Gi-sung Yeo, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A semiconductor device having a fin type active area includes a plurality of active regions, a first device isolation layer and a recessed second device isolation layer disposed in a direction of gate electrodes of the semiconductor device. A recessed second device isolation layer and a first device isolation layer are disposed in a vertical direction of the gate electrodes. The first device isolation layer and the plurality of active regions are alternately disposed in a first direction of the plurality of active regions.