The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2010
Filed:
Sep. 17, 2008
Shian-jyh Lin, Taipei County, TW;
Chien-li Cheng, Hsin-Chu, TW;
Pei-ing Lee, Chang-Hua Hsien, TW;
Chung-yuan Lee, Tao-Yuan, TW;
Shian-Jyh Lin, Taipei County, TW;
Chien-Li Cheng, Hsin-Chu, TW;
Pei-Ing Lee, Chang-Hua Hsien, TW;
Chung-Yuan Lee, Tao-Yuan, TW;
Nanya Technology Corp., Kueishan, Tao-Yuan Hsien, TW;
Abstract
A method of fabricating self-aligned recess utilizing asymmetric poly spacer is disclosed. A semiconductor substrate having thereon a first pad layer and second pad layer is provided. A plurality of trenches is embedded in a memory array region of the semiconductor substrate. Each of the trenches includes a trench top layer that extrudes from a main surface of the semiconductor substrate. Asymmetric poly spacer is formed on one side of the extruding trench top layer and is used, after oxidized, as a mask for forming a recess in close proximity to the trenches.