The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 14, 2010

Filed:

Sep. 10, 2008
Applicants:

Yakov Roizin, Migdal Haemek, IL;

Yossi Netzer, Migdal Haemek, IL;

Ira Naot, Migdal Haemek, IL;

Myriam Buchbinder, Migdal Haemek, IL;

Avi Ben-guigui, Migdal Haemek, IL;

Inventors:

Yakov Roizin, Migdal Haemek, IL;

Yossi Netzer, Migdal Haemek, IL;

Ira Naot, Migdal Haemek, IL;

Myriam Buchbinder, Migdal Haemek, IL;

Avi Ben-Guigui, Migdal Haemek, IL;

Assignee:

Tower Semiconductor Ltd., Migdal Haemek, IL;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8239 (2006.01);
U.S. Cl.
CPC ...
Abstract

A pre-metal dielectric structure of a single-poly EEPROM structure includes a UV light-absorbing film, which prevents the charge on a floating gate of the EEPROM structure from being changed in response to UV radiation. In one embodiment, the pre-metal dielectric structure includes a first pre-metal dielectric layer, an amorphous silicon layer located over the first pre-metal dielectric layer, and a second pre-metal dielectric layer located over the amorphous silicon layer.


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