The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2010
Filed:
Mar. 30, 2007
Applicants:
Maria Wang, Plano, TX (US);
Erika Leigh Shoemaker, Richardson, TX (US);
Mary Roby, Plano, TX (US);
Stuart Jacobsen, Frisco, TX (US);
Inventors:
Maria Wang, Plano, TX (US);
Erika Leigh Shoemaker, Richardson, TX (US);
Mary Roby, Plano, TX (US);
Stuart Jacobsen, Frisco, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/07 (2006.01); H01L 21/04 (2006.01);
U.S. Cl.
CPC ...
Abstract
Provided is a method for manufacturing a semiconductor device. The method for manufacturing the semiconductor device, without limitation, includes forming a first semiconductor layer over a substrate, and forming a second semiconductor layer over the first semiconductor layer, wherein an amorphous nitrided silicon adhesion layer is located between and adheres the first and second semiconductor layers.