The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2010
Filed:
Dec. 04, 2007
Myong Soo Cho, Gyunggi-do, KR;
Ki Yeol Park, Daegu, KR;
Sang Yeob Song, Gyunggi-do, KR;
SI Hyuk Lee, Gyunggi-do, KR;
Pun Jae Choi, Gyunggi-do, KR;
Myong Soo Cho, Gyunggi-do, KR;
Ki Yeol Park, Daegu, KR;
Sang Yeob Song, Gyunggi-do, KR;
Si Hyuk Lee, Gyunggi-do, KR;
Pun Jae Choi, Gyunggi-do, KR;
Samsung LED Co., Ltd., Gyunggi-do, KR;
Abstract
A method of manufacturing a vertical structure light emitting diode device, the method including: sequentially forming a first conductivity type III-V group compound semiconductor layer, an active layer, and a second conductivity type III-V group compound semiconductor layer on a substrate for growth; bonding a conductive substrate to the second conductivity type III-V group compound semiconductor layer; removing the substrate for growth from the first conductivity type III-V group compound semiconductor layer; and forming an electrode on an exposed portion of the first conductive III-V group compound semiconductor layer due to the removing the substrate for growth, wherein the bonding a conductive substrate comprises partially heating a metal bonding layer by applying microwaves to a bonding interface while bringing the metal bonding layer into contact with the bonding interface.