The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2010
Filed:
Mar. 31, 2005
Hisashi Minemoto, Osaka, JP;
Yasuo Kitaoka, Osaka, JP;
Isao Kidoguchi, Hyogo, JP;
Yusuke Mori, Suita-shi, Osaka, JP;
Fumio Kawamura, Osaka, JP;
Takatomo Sasaki, Osaka, JP;
Yasuhito Takahashi, Osaka, JP;
Hisashi Minemoto, Osaka, JP;
Yasuo Kitaoka, Osaka, JP;
Isao Kidoguchi, Hyogo, JP;
Yusuke Mori, Suita-shi, Osaka, JP;
Fumio Kawamura, Osaka, JP;
Takatomo Sasaki, Osaka, JP;
Yasuhito Takahashi, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Other;
Abstract
A method for producing Group-III-element nitride crystals by which an improved growth rate is obtained and large high-quality crystals can be grown in a short time, a producing apparatus used therein, and a semiconductor element obtained using the method and the apparatus are provided. The method is a method for producing Group-III-element nitride crystals that includes a crystal growth process of subjecting a material solution containing a Group III element, nitrogen, and at least one of alkali metal and alkaline-earth metal to pressurizing and heating under an atmosphere of a nitrogen-containing gas so that the nitrogen and the Group III element in the material solution react with each other to grow crystals. The method further includes, prior to the crystal growth process, a material preparation process of preparing the material solution in a manner that under an atmosphere of a nitrogen-containing gas, at least one of an ambient temperature and an ambient pressure is set so as to be higher than is set as a condition for the crystal growth process so that the nitrogen is allowed to dissolve in a melt containing the Group III element and the at least one of alkali metal and alkaline-earth metal. The method according to the present invention can be performed by using, for example, the producing apparatus shown in.