The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 07, 2010

Filed:

Dec. 04, 2008
Applicants:

Yoshihiko Iga, Hitachinaka, JP;

Yutaka Inoue, Komoro, JP;

Hiroshi Moriya, Ushiku, JP;

Yasuhisa Semba, Saku, JP;

Susumu Sorimachi, Komoro, JP;

Inventors:

Yoshihiko Iga, Hitachinaka, JP;

Yutaka Inoue, Komoro, JP;

Hiroshi Moriya, Ushiku, JP;

Yasuhisa Semba, Saku, JP;

Susumu Sorimachi, Komoro, JP;

Assignee:

Opnext Japan, Inc., Yokohama-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a multi-beam semiconductor laser device, relative difference in shear strain applied to each of light-emitting portions of a laser chip mounted on a submount is suppressed, thereby reducing relative difference in polarization angle. A semiconductor laser element array mounted on a submount has a structure in which a semiconductor layer having two ridge portions is stacked on a substrate, and Au plating layers are formed on the surfaces of p type electrodes formed on the ridge portions. In each of the ridge portions, a central position of the Au plating layer in a width direction is intentionally displaced with respect to a central position of the underlying light-emitting portion in a width direction, so that shear strain is applied to each of the light-emitting portions at a stage before the semiconductor laser element array is mounted on the submount.


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