The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2010
Filed:
Jan. 03, 2007
In-gyu Baek, Seoul, KR;
Dong-chul Kim, Gyeonggi-do, KR;
Jang-eun Lee, Gyeonggi-do, KR;
Myoung-jae Lee, Gyeonggi-do, KR;
Sun-ae Seo, Gyeonggi-do, KR;
Hyeong-jun Kim, Seoul, KR;
Seung-eon Ahn, Gyeonggi-do, KR;
Eun-kyung Yim, Daegu-Gwangyeoksi, KR;
In-Gyu Baek, Seoul, KR;
Dong-Chul Kim, Gyeonggi-do, KR;
Jang-Eun Lee, Gyeonggi-do, KR;
Myoung-Jae Lee, Gyeonggi-do, KR;
Sun-Ae Seo, Gyeonggi-do, KR;
Hyeong-Jun Kim, Seoul, KR;
Seung-Eon Ahn, Gyeonggi-do, KR;
Eun-Kyung Yim, Daegu-Gwangyeoksi, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
A multi-bit memory cell stores information corresponding to a high resistive state and multiple other resistive states lower than the high resistive state. A resistance of a memory element within the multi-bit memory cell switches from the high resistive state to one of the other multiple resistive states by applying a corresponding current to the memory element.