The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2010
Filed:
May. 30, 2007
Applicants:
Hideki Yoshinaga, Yokohama, JP;
Hideo Mori, Yokohama, JP;
Inventors:
Hideki Yoshinaga, Yokohama, JP;
Hideo Mori, Yokohama, JP;
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1343 (2006.01);
U.S. Cl.
CPC ...
Abstract
Provided is a novel structure of an active matrix TFT backplane. In order to form an auxiliary capacitor by a pixel electrode or a drain electrode of a TFT connected therewith, a base metal layer is formed on a glass substrate and a substrate insulating layer is formed on an entire surface thereof. By the structure, position alignment of the drain electrode with a counter electrode is unnecessary. An area for electrical capacitor formation is determined by size precision of the drain electrode, so a variation in electrical capacitance is suppressed to a small value.