The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2010
Filed:
Oct. 29, 2008
Boris Murmann, Palo Alto, CA (US);
Jason C. HU, Cupertino, CA (US);
Boris Murmann, Palo Alto, CA (US);
Jason C. Hu, Cupertino, CA (US);
The Board of Trustees of the Leland Stanford Junior University, Palo Alto, CA (US);
Abstract
Amplifier circuits and methods are implemented using a variety of different embodiments. According to one such embodiment, a method is implemented using a field-effect transistor (FET) having a gate node, a source node and a drain node. A first circuit state is implemented in which the gate node, the source node and the drain node are connected to inputs that generate a stored charge at the gate node, the amount of stored charge at the gate node being responsive to a first voltage level. A second circuit state is implemented in which the drain node is connected to a voltage source, the source node is connected to a load, and while charge at the gate node is preserved, current between the drain node to the source node drives a voltage level of the load to a proportionally amplified version of the first voltage level.