The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2010
Filed:
Jan. 18, 2007
Katsuhiro Kato, Tokyo, JP;
Kenji Ichikawa, Tokyo, JP;
Katsuhiro Kato, Tokyo, JP;
Kenji Ichikawa, Tokyo, JP;
Oki Semiconductor Co., Ltd., Tokyo, JP;
Abstract
A semiconductor device includes a transistor region, a first guard ring, a second guard ring, and a silicide region. A first-conductive-type transistor is formed in the transistor region. The first guard ring is a second-conductive-type first impurity diffusion layer surrounding the transistor region with a first width, and is coupled to a first reference potential. The second guard ring is a first-conductive-type transistor second impurity diffusion layer surrounding the first guard ring with a second width. The silicide region is formed on the surface of the second guard ring such that substantially no silicide is formed on a portion of the surface of the second guard ring on the side facing a drain region of the first-conductive-type transistor, and is connected to a second reference potential line whose potential is higher than that of the first reference potential line.