The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 07, 2010

Filed:

Feb. 20, 2007
Applicants:

Makoto Mizukami, Kawasaki, JP;

Shigeru Kinoshita, Yokohama, JP;

Shigeyuki Takagi, Fujisawa, JP;

Inventors:

Makoto Mizukami, Kawasaki, JP;

Shigeru Kinoshita, Yokohama, JP;

Shigeyuki Takagi, Fujisawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2006.01); H01L 29/788 (2006.01); H01L 21/8247 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor memory includes: a first memory cell transistor including: a first floating gate electrode provided on and insulated from the substrate; and a first control gate electrode provided on and insulated from the first floating gate electrode; and a second memory cell transistor including: a second floating gate electrode provided on and insulated from the substrate, an upper surface being larger than a lower surface, and the upper surface being lower than an upper surface of the first floating gate electrode; and a second control gate electrode provided on and insulated from the second floating gate electrode.


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