The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2010
Filed:
Jan. 24, 2007
Applicants:
Fred Hurkx, Best, NL;
Prabhat Agarwal, Brussels, BE;
Inventors:
Fred Hurkx, Best, NL;
Prabhat Agarwal, Brussels, BE;
Assignee:
NXP B.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/8235 (2006.01);
U.S. Cl.
CPC ...
Abstract
A transistor comprises a nanowire () having a source () and a drain () separated by an intrinsic or lowly doped region (). A potential barrier is formed at the interface of the intrinsic or lowly doped region () and one of the source () and the drain (). A gate electrode () is provided in the vicinity of the potential barrier such that the height of the potential barrier can be modulated by applying an appropriate voltage to the gate electrode ().