The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 07, 2010

Filed:

Jan. 08, 2008
Applicants:

Deok-hoi Kim, Gyeonggi-Do, KR;

Chung Yi, Gyeonggi-Do, KR;

Inventors:

Deok-Hoi Kim, Gyeonggi-Do, KR;

Chung Yi, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G21K 5/10 (2006.01);
U.S. Cl.
CPC ...
Abstract

In an ion implanting apparatus and a method for implanting ions are provided. The ion implanting apparatus includes an ion source part, a substrate holding part, a beam current adjusting part, a doping quantity measuring part, and an ion beam control part. The ion source part generates an ion beam. The ion beam is irradiated onto the substrate and the ions are implanted into the substrate. The beam current adjusting part is disposed between the ion source part and the substrate holding part, to adjust a beam current. The doping quantity measuring part is disposed on substantially the same surface as the substrate, to measure ion doping quantity. The ion beam control part is connected to the doping quantity measuring part, to control the ion source part and the beam current adjusting part.


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