The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2010
Filed:
Jun. 09, 2008
Thomas R. Keyser, Plymouth, MN (US);
Cheisan J. Yue, Roseville, MN (US);
Thomas R. Keyser, Plymouth, MN (US);
Cheisan J. Yue, Roseville, MN (US);
Honeywell International Inc., Morristown, NJ (US);
Abstract
A neutron detection structure built from a Silicon-On-Insulator memory cell includes a conversion layer for converting incident neutrons into emitted charged particles, a device layer for receiving the emitted charged particles, a buried oxide layer separating the conversion layer from the device layer and directly adjacent to the conversion layer and the device layer, an isolation layer, a passivation layer formed on the isolation layer opposite the device layer and buried oxide layer, a carrier adhered by an adhesion layer to the passivation layer opposite the isolation layer, and a plurality of conductive contacts to provide electrical contact to the device layer. A corresponding method for fabricating such a structure includes permanently bonding a carrier to a passivated SOI SRAM wafer, removing an insulative substrate, depositing a conversion layer where at least a portion of the insulative substrate was removed, and forming at least one opening in the conversion layer and the buried oxide layer to provide at least one electrical contact to the device layer.