The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2010
Filed:
Mar. 09, 2006
Applicants:
Visvamohan Yegnashankaran, Redwood City, CA (US);
Gobi R. Padmanabhan, Sunnyvale, CA (US);
Inventors:
Visvamohan Yegnashankaran, Redwood City, CA (US);
Gobi R. Padmanabhan, Sunnyvale, CA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming capacitive structures in trenches which have been formed in a multilevel metal interconnect structure is disclosed. The method of forming the capacitive structures allows the capacitance of the multilevel metal interconnect structure to be adjusted, and thereby optimized, to respond to signals from devices that are formed on an underlying substrate.