The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2010
Filed:
Nov. 13, 2008
Dong-chul Yoo, Gyeonggi-do, KR;
Myoung-bum Lee, Seoul, KR;
Young-geun Park, Gyeonggi-do, KR;
Han-mei Choi, Seoul, KR;
Se-hoon OH, Gyeonggi-do, KR;
Byong-ju Kim, Gyeonggi-do, KR;
Kyong-won an, Seoul, KR;
Seon-ho JO, Gyeongsangnam-do, KR;
Dong-chul Yoo, Gyeonggi-do, KR;
Myoung-bum Lee, Seoul, KR;
Young-geun Park, Gyeonggi-do, KR;
Han-mei Choi, Seoul, KR;
Se-hoon Oh, Gyeonggi-do, KR;
Byong-ju Kim, Gyeonggi-do, KR;
Kyong-won An, Seoul, KR;
Seon-ho Jo, Gyeongsangnam-do, KR;
Abstract
Methods of manufacturing a semiconductor device are provided including forming a charge storage layer on a gate insulating layer that is on a semiconductor substrate. A blocking insulating layer is formed on the charge storage layer and an electrode layer is formed on the blocking insulating layer. The blocking insulating layer may be formed by forming a lower metal oxide layer at a first temperature and forming an upper metal oxide layer on the lower metal oxide layer at a second temperature, lower than the first temperature.