The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2010
Filed:
May. 30, 2008
Applicants:
O-kyun Kwon, Daejeon, KR;
Dong-woo Suh, Daejeon, KR;
Jung-hyung Pyo, Seoul, KR;
Gyung-ock Kim, Seoul, KR;
Inventors:
O-Kyun Kwon, Daejeon, KR;
Dong-Woo Suh, Daejeon, KR;
Jung-Hyung Pyo, Seoul, KR;
Gyung-Ock Kim, Seoul, KR;
Assignee:
Electronics and Telecommunications Research Institute, Daejeon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
Provided is a semiconductor and a method for forming the same. The method includes forming a buried insulating layer locally in a substrate. The substrate is etched to form an opening exposing the buried insulating layer, and a silicon pattern spaced in at least one direction from the substrate is formed on the buried insulating layer. A first insulating layer is formed to enclose the silicon pattern.