The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2010
Filed:
Mar. 29, 2007
Kishor Purushottam Gadkaree, Big Flats, NY (US);
Michael John Moore, Corning, NY (US);
Mark Andrew Stocker, Painted Post, NY (US);
Jiangwei Feng, Painted Post, NY (US);
Joseph Frank Mach, Lindley, NY (US);
Kishor Purushottam Gadkaree, Big Flats, NY (US);
Michael John Moore, Corning, NY (US);
Mark Andrew Stocker, Painted Post, NY (US);
Jiangwei Feng, Painted Post, NY (US);
Joseph Frank Mach, Lindley, NY (US);
Corning Incorporated, Corning, NY (US);
Abstract
Methods and apparatus for producing a semiconductor on glass (SiOG) structure include: subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer in the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a glass substrate using electrolysis; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing at least one cleaved surface; and subjecting the at least one cleaved surface to a wet etching process.