The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 07, 2010

Filed:

May. 21, 2007
Applicants:

Akiko Tsukamoto, Chiba, JP;

Hisashi Hasegawa, Chiba, JP;

Jun Osanai, Chiba, JP;

Inventors:

Akiko Tsukamoto, Chiba, JP;

Hisashi Hasegawa, Chiba, JP;

Jun Osanai, Chiba, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device manufacturing method includes a field oxide insulation film forming step, an electrode forming step, and a resistor forming step. The field oxide insulation film forming step comprises forming a field oxide insulation film on a surface of the semiconductor substrate so that a portion which corresponds to a side surface portion for each of active regions formed on the surface of the semiconductor substrate, which opposes a rotation center of the surface of the semiconductor substrate in spin-coating of a photoresist in the electrode forming step, and which is located at a front side of a centrifugal force acting direction along the surface of the semiconductor substrate has a curved surface that is convex in a forward direction of the centrifugal force along the surface of the semiconductor substrate as seen in plan view of the semiconductor substrate.


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