The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2010
Filed:
May. 11, 2007
Applicant:
Sang-hoon Cho, Kyoungki-do, KR;
Inventor:
Sang-Hoon Cho, Kyoungki-do, KR;
Assignee:
Hynix Semiconductor Inc., , KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for fabricating a semiconductor device includes forming a plurality of bulb-shaped recesses in a substrate, forming a gate insulation layer over the substrate including the bulb-shaped recesses, forming a patterned first conductive layer over sidewalls of a bulb pattern of the corresponding bulb-shaped recesses, and forming a patterned second conductive layer over the gate insulation layer while filling the bulb-shaped recesses.
Cho, Sang-Hoon. (2010). Method for fabricating semiconductor device with bulb-shaped recess gate (U.S. Patent No. 7790552). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7790552
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