The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7790547 B1

PDF
Full Text
Expired
Date of Patent:
Sep. 07, 2010

Filed:

Dec. 27, 2006
Applicant:

Jin Hyo Jung, Seoul, KR;

Inventor:

Jin Hyo Jung, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method and non-volatile memory device are provided that are characterized by ion-implantation of impurities in the sidewalls of a first electrode. The inclusion of impurities in the sidewalls eliminates geometric abnormalities, referred to herein as a bird's beak, in the first electrode, which are caused by numerous oxidation processes being performed in the overall memory fabrication process. By eliminating these geometric abnormalities, thickening of the block oxide layer proximate the area of geometric abnormalities does not occurring, resulting in a memory device capable of efficiently programming and erasing data.


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Jung, Jin. (2010). Non-volatile memory device and method for fabricating the same (U.S. Patent No. 7790547). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7790547

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