The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 07, 2010

Filed:

Dec. 04, 2007
Applicants:

Bruce B. Doris, Brewster, NY (US);

Mahender Kumar, Fishkill, NY (US);

Werner A. Rausch, Stormville, NY (US);

Robin Van Den Nieuwenhuizen, Ridgefield, CT (US);

Inventors:

Bruce B. Doris, Brewster, NY (US);

Mahender Kumar, Fishkill, NY (US);

Werner A. Rausch, Stormville, NY (US);

Robin Van Den Nieuwenhuizen, Ridgefield, CT (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/336 (2006.01); H01L 21/76 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for forming multiple self-aligned gate stacks, the method comprising, forming a first group of gate stack layers on a first portion of a substrate, forming a second group of gate stack layers on a second portion of the substrate adjacent to the first portion of the substrate, etching to form a trench disposed between the first portion and the second portion of the substrate, and filling the trench with an insulating material.


Find Patent Forward Citations

Loading…