The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2010
Filed:
Mar. 02, 2006
Giosuè Caliano, Rome, IT;
Alessandro Caronti, 109 - Rome, IT;
Vittorio Foglietti, Rome, IT;
Elena Cianci, Rome, IT;
Antonio Minotti, Rome, IT;
Alessandro Nencioni, Casale Monferrato, IT;
Massimo Pappalardo, 22 - Rome, IT;
Giosuè Caliano, Rome, IT;
Alessandro Caronti, 109 - Rome, IT;
Vittorio Foglietti, Rome, IT;
Elena Cianci, Rome, IT;
Antonio Minotti, Rome, IT;
Alessandro Nencioni, Casale Monferrato, IT;
Massimo Pappalardo, 22 - Rome, IT;
Abstract
The invention concerns a manufacturing process, and the related micromachined capacitive ultra-acoustic transducer, that uses commercial silicon waferalready covered on at least one or, more preferably, on both faces by an upper layerand by a lower layer' of silicon nitride deposited with low pressure chemical vapour deposition technique, or deposition LPCVD deposition. One of the two layersor′ of silicon nitride, of optimal quality, covering the waferis used as emitting membrane of the transducer. As a consequence, the micro-cell arrayforming the CMUT transducer is grown onto one of the two layers of silicon nitride, i.e. it is grown at the back of the transducer with a sequence of steps that is reversed with respect to the classical technology.