The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2010
Filed:
Sep. 16, 2008
Applicants:
Ching-chieh Shih, Hsin-Chu, TW;
An-thung Cho, Hsin-Chu, TW;
Chia-tien Peng, Hsin-Chu, TW;
Kun-chih Lin, Hsin-Chu, TW;
Inventors:
Ching-Chieh Shih, Hsin-Chu, TW;
An-Thung Cho, Hsin-Chu, TW;
Chia-Tien Peng, Hsin-Chu, TW;
Kun-Chih Lin, Hsin-Chu, TW;
Assignee:
AU Optronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for fabricating a photo sensor on an amorphous silicon thin film transistor panel includes forming a photo sensor with a bottom electrode, a silicon-rich dielectric layer, and a top electrode, such that the light sensor has a high reliability. The fabrication method is compatible with the fabrication process of a thin film transistor.