The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2010
Filed:
Mar. 21, 2005
Takayoshi Minami, Kawasaki, JP;
Takayoshi Minami, Kawasaki, JP;
Fujitsu Semiconductor Limited, Yokohama, JP;
Abstract
A double exposure process is performed using a halftone phase shift mask () including gate patterns (), assist patterns () and () with different resoluble line widths, and an assist pattern () with a line width equal to or smaller than a resolution limit which are respectively inserted into portions in each of which a distance between the gate patterns () is large, and a Levenson phase shift mask () including shifter patterns () corresponding to the gate patterns () of the photomaskOn this occasion, the assist patterns (), (), and () are erased and only the gate patterns () are transferred. Consequently, when patterns are transferred by the double exposure process, a common depth of focus of the patterns is improved and highly uniform line widths are realized, which makes it possible to manufacture a highly reliable semiconductor device.