The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2010
Filed:
Dec. 12, 2008
Rintaro Koda, Tokyo, JP;
Takahiro Arakida, Kanagawa, JP;
Satoshi Taniguchi, Kanagawa, JP;
Yuji Masui, Kanagawa, JP;
Nobuhiro Suzuki, Kanagawa, JP;
Tomoyuki Oki, Miyagi, JP;
Chiyomi Uchiyama, Kanagawa, JP;
Kayoko Kikuchi, Kanagawa, JP;
Rintaro Koda, Tokyo, JP;
Takahiro Arakida, Kanagawa, JP;
Satoshi Taniguchi, Kanagawa, JP;
Yuji Masui, Kanagawa, JP;
Nobuhiro Suzuki, Kanagawa, JP;
Tomoyuki Oki, Miyagi, JP;
Chiyomi Uchiyama, Kanagawa, JP;
Kayoko Kikuchi, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A light-emitting element assembly includes a support substrate having a first surface, a second surface facing the first surface, a recessed portion, and a conductive material layer formed over the first surface and the inner surface of the recessed portion, and a light-emitting element. The light-emitting element has a laminated structure including a first compound semiconductor layer, a light-emitting portion, and a second compound semiconductor layer, at least the second compound semiconductor layer and the light-emitting portion constituting a mesa structure. The light-emitting element further includes an insulating layer formed, a second electrode, and a first electrode. The mesa structure is placed in the recessed portion so that the conductive material layer and the second electrode are in at least partial contact with each other, and light emitted from the light-emitting portion is emitted from the second surface side of the first compound semiconductor layer.