The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2010
Filed:
Aug. 21, 2009
Riichiro Takemura, Tokyo, JP;
Takayuki Kawahara, Higashiyamato, JP;
Kenchi Ito, Kunitachi, JP;
Hiromasa Takahashi, Hachioji, JP;
Riichiro Takemura, Tokyo, JP;
Takayuki Kawahara, Higashiyamato, JP;
Kenchi Ito, Kunitachi, JP;
Hiromasa Takahashi, Hachioji, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
In MRAM using a spin-transfer torque switching, a sufficient writing operation with a small memory cell is realized, and a reading current is enlarged while a reading disturbance is suppressed. In the case where the free layer of the tunnel magneto-resistance element is located on the side of the bit line, using a PMOS transistor, and in the case where the fixed layer of the tunnel magneto-resistance element is located on the side of the bit line, using an NMOS transistor, an anti-parallel writing in a source grounding operation is performed. The reading and writing operation margin is improved by performing a reading operation in an anti-parallel writing direction.