The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2010
Filed:
May. 27, 2009
Mee-hye Jung, Hwaseong-si, KR;
Nak-cho Choi, Seoul, KR;
Doo-hwan You, Suwon-si, KR;
Jae-jin Lyu, Gyeonggi-do, KR;
Mee-Hye Jung, Hwaseong-si, KR;
Nak-Cho Choi, Seoul, KR;
Doo-Hwan You, Suwon-si, KR;
Jae-Jin Lyu, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A method of manufacturing an active matrix substrate is presented. The method includes forming a transistor having a gate line, a semiconductor layer, an insulating layer between the gate line and the semiconductor layer, a source electrode, and a drain electrode; forming a pixel electrode comprising a first sub-pixel electrode and a second sub-pixel electrode; forming an auxiliary coupling electrode connected to the second sub-pixel electrode through a first contact hole; and forming the first sub-pixel electrode through a second contact hole connected to the drain electrode of the transistor. The auxiliary coupling electrode and the first sub-pixel electrode overlap each other such that the second sub-pixel electrode is capacitively coupled to the first sub-pixel electrode and the auxiliary coupling electrode and the electrode part form a capacitor.