The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2010
Filed:
Mar. 03, 2004
Toshiyuki Takizawa, Osaka, JP;
Toshiyuki Takizawa, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A p-type semiconductor includes a host material that is a semiconductor, an acceptor element and a localized band formation element. The acceptor element is doped to the host material and has fewer valence electrons than valance electrons of at least one of the elements which compose the host material. The localized band formation element is doped to the host material, is isovalent with at least one of the elements which compose the host material, has smaller electronegativity than the electronegativity of the element(s), and forms the localized band which activates holes of an acceptor level.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile