The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2010
Filed:
Jan. 26, 2009
Applicants:
Ki-seon Park, Ichon-shi, KR;
Jae-sung Roh, Ichon-shi, KR;
Inventors:
Ki-Seon Park, Ichon-shi, KR;
Jae-Sung Roh, Ichon-shi, KR;
Assignee:
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 27/94 (2006.01); H01L 27/108 (2006.01); H01L 27/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device with a dielectric structure and a method for fabricating the same are provided. A capacitor in the semiconductor device includes: a bottom electrode formed on a substrate; a first dielectric layer made of titanium dioxide (TiO) in rutile phase and formed on the bottom electrode; and an upper electrode formed on the first dielectric layer.